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    Please use this identifier to cite or link to this item: http://ccur.lib.ccu.edu.tw/handle/A095B0000Q/170

    Title: 共振腔增強之矽基鍺錫光偵測器與發光二極體;Resonant-cavity-enhanced GeSn Photodetectors and Light-emitters on Silicon
    Authors: 黃柏鈞;HUANG, BO-JUN
    Contributors: 機械工程系研究所
    Keywords: 鍺錫合金;共振腔效應;光偵測器;發光元件;GeSn alloy;Cavity effect;Photodetectors;Light-emitters
    Date: 2018
    Issue Date: 2019-05-23 12:52:48 (UTC+8)
    Publisher: 機械工程系研究所
    Abstract: 本文之研究目的為發展新型 IV- IV 族鍺錫合金光偵測器與發光元件,利用低溫分子束磊(MBE)成長於矽基板上,且 IV- IV 族鍺錫合金與 CMOS 製程相容,使用黃光微影製程製做元件便如魚得水。藉由設計共振腔結構,可大大提升響應與發光,用以改善四族半導體材料在先天上發光特性的不足,並能夠有效地將偵測波段涵蓋整個通訊波段(1260-1675 nm)。在光偵測器方面,我們對元件進行電性與光性量測。偏壓在+1V 與-1V 之間可以看到其良好的二極體特性,正逆偏壓比例達到 173,可清楚觀測出其二極體整流現象;在偏壓為-1V 時,能夠看到有無照光之光電流產生,能夠看出元件有著光偵測器之性能;在光響應度量測上,於光源波長 1550 nm 下可達到 0.35 A/W,和未具共振腔之元件相比增加了 30%,偵測範圍也能夠達到 1800 nm,我們預計增加錫的摻雜濃度,提升響應度強度與涵蓋波長。在發光元件,本文所用為正向入射式共振腔結構,利用各層折射率不同產生共振效果以增強元件發光效率,並量測元件的電致發光頻譜以探討共振腔增強之發光特性,且分別於變溫環境與變電流強度下量測,藉以推算出其光學增益,並達成光學損耗減少。未來,將提高錫濃度及改良共振腔設計以實現光學增益,朝著電激發雷射為目標邁進。
    The purpose of this paper is to develop a GeSn alloy light-emitting element, which canbe largely enhanced by resonant cavity structure.To improve the insufficiency ofluminescence properties of Group IV semiconductor materials and effectively enhance thedetection band to cover the entire communication band (1260-1675nm).Firstly, this studyuses low-temperature Molecular-beam epitaxy to grow resonant cavity structuralcomponents, and uses the lithography process to reverse Reactive-ion etching (RIE) andwet etching (BOE etching solution) to make p-i-n normal incidence The structure usesresonance effects to improve detection and luminous efficiency.In terms of photodetectors,we perform electrical and optical measurements on components. When the bias voltage is-1V, the charge density is 0.68A / cm2, and the dark current is still too high. In the opticalresponse measurement, it can reach 0.35A / W at the source wavelength of 1550nm. Weexpect to increase the Sn. The doping concentration is used to increase the responsivenessand coverage wavelength.In terms of resonant cavity effect, we use a normal-incidentresonant cavity structure, which uses different refractive indices of each layer to produceresonance effects, and measures the electroluminescence spectrum of the component toobserve the enhanced luminescence characteristics of the resonant cavity and extract therefraction of the active layer. and measured variable temperature and variable currentintensity, respectively, to calculate optical gain. At present, the effect of the resonancecavity enhancement has been significantly manifested in the luminescence spectrum. In thefuture , the Sn concentration will be increased, aiming to excite as a laser.Keywords: GeSn alloy, resonant cavity effective, phtotdetector, emitter.
    Appears in Collections:[機械工程學系] 學位論文

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