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    Title: 鍺錫/鍺量子井光偵測器之光電特性探討;Optoelectronic Characteristics of GeSn/Ge quantum-well photodetectors
    Authors: 蔡佳和;Tsai, Chia-Ho
    Contributors: 機械工程系研究所
    Keywords: 暗電流;金屬半導體金屬光偵測器;多重量子井;鍺錫合金;光響應度;photo responsivity;dark current;MSM photodetector;multiple quantum well;GeSn alloy
    Date: 2018
    Issue Date: 2019-05-23 12:52:33 (UTC+8)
    Publisher: 機械工程系研究所
    Abstract: 鍺錫合金為新興的IV族半導體材料,隨著錫濃度的上升而能隙變小,並且錫到達一定濃度時轉變成直接能隙材料,所以可藉由改變濃度來控制材料之能隙。此外能以CMOS半導體技術製作成矽基光電元件,故鍺錫合金在發展光子積體電路上有很高的發展潛力,在現今通訊蓬勃發展的世界中有利於大幅地提升資訊傳輸量。 本論文探討鍺錫/鍺多重量子井金屬半導體金屬光偵測器在不同溫度下的光電特性。本研究使用黃光微影方式製作出錫濃度分別為3%與4%的鍺錫/鍺金屬半導體金屬多重量子井光偵測器。量測光偵測器在不同溫度下光響應度與暗電流等光電特性。隨著溫度的上升,暗電流有增大的現象,並經由阿瑞尼士關係式萃取出元件的活化能,結果發現活化能比能隙的一半小了很多,代表元件內部缺陷少。量測的光響應度頻譜出現階梯化特徵,代表能階出現量子化的現象,我們也藉由此現象萃取出重電洞(HH)與輕電洞(LH)的能隙。 本研究製作的元件光響應度截止波長已拓展到1700nm,且已涵蓋整個通訊波段,可在光纖通訊有重要應用。藉由不同溫度下量測的光響應度可以知道,隨著溫度的上升,可以觀察到光響應度有紅移現象,雖然溫度對能隙的改變並不會很大,可是溫度對於元件仍然是有影響的。另外由光響應度找到的截止波長與光致螢光波峰位置吻合,證明兩種方法皆可以找出元件的能隙。由活化能的數據可以知道量子井結構非常適合鍺錫合金,能解決其內部缺陷過多的問題。
    GeSn is an emerging group-IV semiconductor material. As the Sn concentration increases, the band gap decreases. When a certain Sn concentration is met, it becomes a direct-band-gap material. Therefore, the band gap of the material can be controlled by adjusting the Sn concentration. Moreover, with the CMOS technology, this study produced a silicon-based photoelectric component. Thus, the potential of GeSn in developing PICs is very high. In the modern world where the communication business is thriving, GeSn can be used to greatly increase information transmission capacity. This study aimed to explore the optoelectronic characteristics of GeSn/Ge quantum-well MSM photodetectors under different temperatures. This study used photolithography to produce GeSn/Ge quantum-well photodetectors with the Sn concentration of 3% and 4%. The optoelectronic characteristics such as responsivity and dark current of the photodetectors were measured under different temperatures. The dark current increased as the temperature increased. Using the Arrhenius equation, the activation energy of the component was extracted. It was found that the activation energy was much smaller than half of the band gap, meaning there were very few component internal defects. The spectrum for the responsivity measurement displayed the feature of the step shape, representing the phenomenon of quantization of energy level, through which we could extract the band gaps of heavy holes (HH) and light holes (LH).The responsivity cut-off wavelength of the component produced by this study was extended to 1700nm, covering the whole telecommunication band. The component can be used for important applications in fiber-optic communication. According to the responsivities measured under different temperatures, as the temperature went up, the redshift of the responsivity can be observed. Although the influence of temperature on band gap was not strong, temperature could still influence the component. In addition, the cut-off wavelength obtained based on responsivity was consistent with the position of the photoluminescence peak, proving that the band gap of the component could be obtained using both methods. Based on the activation energy data, the quantum-well structure was very suitable for GeSn. With this structure, the problem of too many internal defects could be solved.
    Appears in Collections:[機械工程學系] 學位論文

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