本論文設計四種不同架構的CMOS 180 nm電壓控制振盪器晶片。第一顆晶片是使用交互耦合對之差動架構，第二顆晶片為源極退化之四相位架構，第三顆晶片為源極退化之背對背串聯可變電容之四相位輸出架構，用以改良第二種架構之相位雜訊。第四顆晶片是結合自動轉導匹配與共模點注入鎖定技術之差動電壓控制振盪器，以達到振幅平衡。第一顆晶片因電路佈局走線僅進行交錯耦合線之電磁模擬，造成量測頻率由15 GHz偏移至9 GHz。第二顆晶片由於電路佈局時電源走線太窄，無法承受6 mA的源極電流而燒毀。第三顆晶片其量測結果振盪頻率3.0 GHz、相位雜訊為-124.8 dBc/Hz、頻率調控範圍為2.47 GHz ~ 3.02 GHz、功率消耗為1.4 mW、晶片面積為1.5×0.9 mm2，FOM計算結果為-342.2 dBc/Hz。第四顆晶片其量測結果振盪頻率為3.5 GHz、相位雜訊為-119.0 dBc/Hz、頻率調控範圍為2.68 GHz ~ 3.73 GHz、鎖定頻寬為0.87 MHz、相位誤差為1.3o、功率消耗為1.6 mW、晶片面積為1.1×0.8 mm2，FOM計算結果為-347.5 dBc/Hz，優於現有文獻同型架構晶片之特性。關鍵字：壓控振盪器、注入鎖定、源極退化。 In this thesis, four different voltage-controlled oscillator (VCO) chips in CMOS 180 nm technology are designed, where the first three are free-running VCOs and the fourth is injection-locked. For the first two VCOs, the source resistive degeneration in the cross-coupled MOSFET pair was adopted for the differential and quadrature outputs. In the third chip, the back-to-back series varactor configuration was applied for phase noise enhancement. In the fourth VCO, the common-mode injection was employed for the free-running oscillation locked onto the externally-injected signal and the spontaneous transconductance match technique was employed for the signal output amplitude balance. Since the interconnect lines, except the cross-over line section, were not included in the electromagnetic simulation, the oscillation frequency is shifting from 15 GHz to 9 GHz. The second chip fails since the narrow power line-width is insufficient to carry the actual current density. The third and fourth VCOs work successfully. The third VCO has a measured oscillation frequency range of 2.47-3.02 GHz with -124.8 dBc/Hz phase noise, giving an excellent FOM of -342.2 dBc/Hz. The power consumption is 1.4 mW and the chip size is 1.5×0.9 mm2. For the injection-locked VCO, the measured oscillation frequency range is 2.68-3.73 GHz with -119.0 dBc/Hz phase noise and the locking bandwidth is 0.87 MHz. The power consumption is 1.6 mW and the chip size is 1.1×0.8 mm2. The injection-locked VCO achieves the best FOM of -347.5 dBc/Hz.Index Terms: Voltage Control Oscillator, Injection Locking, Source resistive degeneration.