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    Please use this identifier to cite or link to this item: http://ccur.lib.ccu.edu.tw/handle/A095B0000Q/336

    Title: 全積體互補式金氧半導體功率放大器;Fully Integrated Complementary Metal-Oxide-Semiconductor Power Amplifier
    Authors: 林建輝;LIN, JIAN-HUEI
    Contributors: 電機工程研究所
    Keywords: 功率放大器;主動分佈式變壓器;放大器熱效應;power amplifier;distributed active transformer;amplifier thermal effect
    Date: 2016
    Issue Date: 2019-07-17
    Publisher: 電機工程研究所
    Abstract: 本篇論文目的在設計一符合5G系統規格之射頻功率放大器,操作頻帶為Ku頻帶。以TSMC 0.18 μm CMOS製程進行製作。電路輸出端採用架構為Aoki提出之主動分佈式變壓器達到功率結合與輸出匹配之目的。為符合系統需求,配合混波器之輸出,設計放大器輸入為差動輸入。放大器輸出以混波器輸出 -7 dBm能量作為設計參考。電路結構為三級放大器串接,預期達到增益20 dB、飽和輸出功率23 dBm之電路規格。電路輸出級與驅動級電晶體皆採用並聯疊接架構,整體電路共使用40顆電晶體。共閘極組態電晶體汲極端與閘極端偏壓皆為3.6 V、共源極組態電晶體閘極端偏壓為1.6 V。由於設計考量不周,造成模擬與量測差異。本篇論文共製作三顆功率放大器。透過模擬方式,找出電路問題發生原因。原因分別為線段佈局造成阻抗偏移、元件操作超越製程規範之功率以及接地路徑佈局不當造成電路振盪。考量電路熱效應、製程變異與量測環境等因素,重新模擬,達到模擬與量測結果吻合。
    This study is devoted to the design of CMOS power amplifier used for the fifth communication system. A power amplifier was implemented in TSMC 0.18 μm CMOS technology. Amplifier uses transformer for output matching. Transformer combines four push-pull cells for high power exporting. The principle of distributed active transformer is power transfer from primary inductor to secondary inductor. Power transformation capability is determined by inductor’s quality factor and coupling coefficient. In order to meet the requirement of 23 dBm saturation output and 20 dB gain at least, two driver stages and one power stage are used in this study. The measured results are different from those by post-layout simulations. The possible root causes, such as imperfect RF choke and thermal effect were discussed in this thesis.
    Appears in Collections:[電機工程研究所] 學位論文

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