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    Please use this identifier to cite or link to this item: http://ccur.lib.ccu.edu.tw/handle/A095B0000Q/162


    Title: 中紅外光矽基鍺錫電致吸收光調變器;Mid-infrared GeSn Electro-absorption Optical Modulators on Silicon
    Authors: 林君翰;LIN, JUN-HAN
    Contributors: 機械工程系研究所
    Keywords: 鍺錫合金;中紅外光;光調變器;電致吸收效應;GeSn;MIR;optical modulator;electro-absorption effect
    Date: 2018
    Issue Date: 2019-05-23 12:52:46 (UTC+8)
    Publisher: 機械工程系研究所
    Abstract: 本論文的主要目的是開發可操作在新興中紅外光範圍內的矽基鍺錫電致吸收調變器。該調變器有著低插入損耗、高消光比與製程整合容易等優勢,可用於高速調變。其原理是在鍺錫合金上施加電場以改變吸收係數,藉由使用電致吸收效應達成光訊號調變的能力。本研究所採用之鍺錫合金擁有較小的能隙,可以通過錫濃度改變做調整,將光學調變範圍從近紅外光延伸至中紅外光範圍。本研究製作並且展示正向入射式的中紅外光電致吸收調變器,元件是使用低溫分子束磊晶技術在矽基板上生長鍺錫 p-i-n二極體結構,使用CMOS兼容的工藝製造元件。從光電流量測中,我們得知鍺錫合金在1600nm的光響應度為0.3A/W,並從中萃取材料吸收係數。接著從穿透光實驗中觀察得到,在1600 nm - 2200 nm光頻譜範圍內的穿透光強度隨著電場的控制而有顯著變化,表明了中紅外光範圍的調變機制實現。此外,施加電場下的元件,光吸收邊緣附近的吸收係數表現出明顯的Franz-Keldysh effect,並且根據公式計算出吸收係數變化與調變比例。本文研製的光調變器的工作範圍為2060-2200nm,在工作區間內實現大於2的高吸收比,且擁有小尺寸的優勢使其能整合於矽光系統。這些研究成果證明了能應用在新興中紅外光的鍺錫電致吸收光調變器。
    The main objective of this thesis is to develop Si-based GeSn modulator which can operate in the mid infrared range. The modulator has advantages such as low insertion loss, high extinction ratio and easy integration of process, suitable for high-speed modulation. Optical modulation is achieved by using the electro-absorption (EA) effect, in which the absorption coefficient is turned by applying an electric field across the GeSn active material. In addition, GeSn alloys features a smaller energy gap which can be adjusted by the Sn composition, allowing for extending the optical modulation from near-infrared to mid-infrared. In this study, normal-incident mid-infrared GeSn electro-absorption optical modulators are fabricated and characterized. GeSn p-i-n heterostructures were grown on silicon substrates using low-temperature molecular beam epitaxy techniques. The devices are fabricated using CMOS-compatible fabrication processes. The transmission experiments show that the transmitted light intensity in the spectral range of 1600 nm – 2200 nm considerably changes with the application of electric field, demonstrating mid-infrared optical modulation. In addition, the absorption coefficient near the band edges are confirmed to be strongly dependent on the applied electric field, showing the Franz-Keldysh effects. The working range of this optical modulator is determined to be 2060-2200 nm, in which a high absorption ration of >2 is achieved. These results demonstrate new GeSn mid-infrared optical modulators needed for mid-infrared silicon photonics applications.
    Appears in Collections:[機械工程學系] 學位論文

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